| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af7dedecac35625aa5a7e749c140f5a5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-14 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R19-0084
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-349
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-021 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F12-16 |
| filingDate |
2014-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6a184b2199f4aac497e22150ecb4a26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb266337a9834b637b141233aaed39cc |
| publicationDate |
2014-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014154169-A |
| titleOfInvention |
Retention drift history based non-volatile memory read threshold optimization |
| abstract |
Dynamically adjusting a read threshold in a non-volatile memory (NVM) to reduce errors due to device threshold voltage distribution shifts, performance, reliability, and / or performance of storage subsystems such as SSDs Provide a controller that improves cost. A retention drift clock uses a reference page (or ECC unit or block) on an NVM die as a readout threshold over a time / temperature reference and a function of those values as a measure of drift (over time / temperature). use. In some first round, a reference page is programmed and an initial read threshold is measured for each of the reference pages. The read threshold is averaged between one or more of all reference pages on the same die and all reference pages in the same die in the I / O device. [Selection] Figure 5A |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9875804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020529096-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021184324-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7079878-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021190139-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10014059-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9773563-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200024355-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10204043-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022063210-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102219596-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015219913-A |
| priorityDate |
2013-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |