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filingDate 2013-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2014-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014145118-A
titleOfInvention Sputter deposition system
abstract PROBLEM TO BE SOLVED: To provide a sputter deposition apparatus capable of forming a thin film having a uniform thickness on a base material at a high speed using an insulator as a target. SOLUTION: A sputter film forming apparatus 1 includes a rectangular waveguide 51 having a dielectric part 30 as a target and a slot antenna 510 in which a microwave is transmitted and a slot 511 through which the microwave passes is formed. The slot 511 is covered with the dielectric part 30, and the microwave plasma generation mechanism 5 that generates plasma on the surface 300 of the dielectric part 30 by the microwave passing through the slot 511, and the surface 300 of the dielectric part 30 A high-frequency plasma generating mechanism 4 that is disposed on a back-facing surface that generates plasma at a high frequency; and a base material 20 that is disposed to face the surface 300 of the dielectric part 30. The sputtered particles that jump out are attached to the surface of the substrate 20 to form a thin film. [Selection] Figure 1
priorityDate 2013-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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