| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66727
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2012-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35891388890ee31c271f796be6597069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65ccfb293f2d846eb13ff762404197c1 |
| publicationDate |
2014-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014120539-A |
| titleOfInvention |
Semiconductor device |
| abstract |
A semiconductor device is miniaturized. A semiconductor device is formed on a p-type semiconductor layer, an n-type semiconductor layer connected to the p-type semiconductor layer, a first electrode layer formed on the n-type semiconductor layer, and a p-type semiconductor layer. And a second electrode layer. The first electrode layer and the second electrode layer are electrically connected to operate at the same potential. The first electrode layer includes a connection line that is a line on the interface side between the second electrode layer and the p-type semiconductor layer in the outer peripheral line at the junction interface between the p-type semiconductor layer and the n-type semiconductor layer; The surface of the semiconductor layer is connected to at least part of the surface of the second electrode layer opposite to the surface in contact with the p-type semiconductor layer. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016066662-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017191918-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016184660-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016072265-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105448694-A |
| priorityDate |
2012-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |