http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014110274-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 |
| filingDate | 2012-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ebb1e5d37bbde9d118b6dba190daef5 |
| publicationDate | 2014-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014110274-A |
| titleOfInvention | Semiconductor quantum dot manufacturing method, single photon generator and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To achieve both high luminous efficiency and position controllability of a semiconductor quantum dot with respect to a semiconductor quantum dot manufacturing method, a single photon generator and a manufacturing method thereof. SOLUTION: In a rectangular concave portion formed on the surface of a semiconductor substrate having a (100) plane as a main surface, a depression made of an inclined surface whose angle with the (100) plane is gentler than 54.7 ° is formed. A lower cladding layer is formed, and a quantum dot layer is formed in the recess. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9654283-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2531568-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2531568-B |
| priorityDate | 2012-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.