http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014107335-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2012-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5bd1d442816c36fd07aba68944036a9 |
| publicationDate | 2014-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014107335-A |
| titleOfInvention | Method for manufacturing nitride semiconductor crystal |
| abstract | An object of the present invention is to provide a method for producing a p-type nitride semiconductor crystal with excellent controllability using a metal organic chemical vapor deposition method. A group III element organometallic compound, a hydride of nitrogen, C—C—O, C—C═O, C═C—O, C═C═O, or C≡C—O And a method for producing a nitride semiconductor crystal using p-type conductivity by simultaneously incorporating C atoms and O atoms into the crystal by metal organic vapor phase epitaxy using an organic compound having such a partial structure as a raw material; To do. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014179584-A |
| priorityDate | 2012-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 410.