| abstract |
A semiconductor device having a structure capable of suppressing an increase in oxygen vacancies in an oxide semiconductor layer is provided. An oxide semiconductor layer, a first source electrode layer in contact with the oxide semiconductor layer, a second source electrode layer covering the first source electrode layer, and a first drain in contact with the oxide semiconductor layer An electrode layer; a second drain electrode layer covering the first drain electrode layer; an oxide semiconductor layer; a second source electrode layer; a gate insulating film formed on the second drain electrode layer; A gate electrode layer formed over the film, and the second source electrode and the second drain electrode are formed using a conductive material that is unlikely to be combined with oxygen. [Selection] Figure 1 |