| abstract |
Disclosed is a sputtering target that can suppress generation of abnormal discharge, nodules, and particles, can produce an oxide semiconductor film having a small S value, excellent TFT reliability, and high mobility. SOLUTION: An oxide including an In element, a Ga element, and a Zn element, and having at least a homologous phase represented by In 2 Ga 2 ZnO 7 as a crystalline phase, a homologous phase represented by InGaZnO 4 , and In 2 O 3. The sputtering target containing the sintered compact in which the intensity | strength of each said crystal phase obtained by X-ray-diffraction measurement satisfy | fills following formula (1-1) and (1-2) is included including the bixbite phase represented by these. (In the formula, I (X) represents the strength of the crystal phase of X.) I (In 2 Ga 2 ZnO 7 )> I (InGaZnO 4 ) (1-1) I (In 2 Ga 2 ZnO 7 )> I (In 2 O 3 ) (1-2) [Selection] Figure 1 |