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filingDate 2013-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5ad9f841ec66d4038ebbf04ba584a42
publicationDate 2014-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014093525-A
titleOfInvention Epitaxial wafer
abstract An object of the present invention is to provide an epitaxial wafer having improved characteristics and yield with reduced surface defect density. An epitaxial wafer of the present invention includes a substrate and an epitaxial structure disposed on the substrate, and the epitaxial structure includes a first epitaxial layer and a second epitaxial layer disposed on the first epitaxial layer. An epitaxial layer, disposed between the first epitaxial layer and the second epitaxial layer, having a first doping concentration at a first boundary adjacent to the first epitaxial layer, and at a second boundary adjacent to the second epitaxial layer And a third epitaxial layer having a second doping concentration different from the first doping concentration. [Selection] Figure 1
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