http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014093422-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2012-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eff8fa501b4a5185ea42ae9a853d196e |
| publicationDate | 2014-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014093422-A |
| titleOfInvention | Semiconductor device and manufacturing method of semiconductor device |
| abstract | An object of the present invention is to suppress an increase in contact resistance between a silicide and a source / drain while maintaining the heat resistance of the silicide. A silicide layer SIL is formed on a surface layer of a semiconductor device SC and includes a first metal and a second metal. In the silicide layer SIL, the concentration of the second metal is lower than the concentration of the first metal. The contact CON is embedded in the interlayer insulating film INSL on the substrate SUB and connected to the silicide layer SIL. The concentration of the second metal in the silicide layer SIL in the region connected to the contact CON is different from the concentration of the second metal in the end of the silicide layer SIL on the side wall SW side. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11563020-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016147316-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016147316-A1 |
| priorityDate | 2012-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.