http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014076943-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate | 2013-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4236fb57a00f2fa8e9b6a3756d841a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_136da8151a38d009aae89e7091642fc9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d96d7202afeeb9db6a6cd462b35f0153 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_969664276c0643b24594a89561f30b32 |
| publicationDate | 2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014076943-A |
| titleOfInvention | Periodic table group 13 metal nitride semiconductor substrate |
| abstract | An object of the present invention is to provide a group 13 nitride semiconductor substrate which is a substrate having an M-plane as a main surface, the size of the substrate is large, and the manufacturing cost is suppressed. The present invention is a periodic table group 13 metal nitride semiconductor substrate having an outer region and a central region adjacent to the outer region, the main surface of which is an M-plane, wherein the central region is m Periodic table Group 13 metal nitride crystal grown in the axial direction, and the outer region grown in a direction inclined at an angle of 10 ° to 80 ° from the m-axis to the c-axis direction The present invention relates to a periodic table group 13 metal nitride semiconductor substrate comprising a crystal. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023190969-A1 |
| priorityDate | 2012-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.