http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014075504-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate | 2012-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecf3b42ddaf4a58d426d716bd048da08 |
| publicationDate | 2014-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014075504-A |
| titleOfInvention | Semiconductor device and manufacturing method of semiconductor device |
| abstract | An object of the present invention is to increase the capacitance of a capacitive element and suppress the variation of the capacitance of the capacitive element. A trench TNH is formed in a multilayer insulating layer MTL. The capacitive element CND is embedded in the trench TNH. The second insulating film INSL2 is a SiCOH film. The trench TNH has a configuration in which the first opening OP1 and the second opening OP2 are repeatedly stacked. The first opening OP1 is formed in the first etching stopper film ETS1, and the second opening OP2 is formed in the second insulating film INSL2. The second opening OP2 is larger than the first opening OP1 in a plan view, and includes the first opening OP1 on the inner side. [Selection] Figure 1 |
| priorityDate | 2012-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.