http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014075459-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d8ec6a6d3f243f3a074fd66abe9219d7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_05e491e7f5a90f8a129348c096563731 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe748869a524d0cc6f131dedfb13c2a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cfee5814d6141f592b74ee63c9073570 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 |
| filingDate | 2012-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de9ebe22dc4cccf3c3138859216da059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc4f37cc70b8eae674c6e9f5fc9877ca |
| publicationDate | 2014-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014075459-A |
| titleOfInvention | Semiconductor device |
| abstract | A white LED light emitting diode that can increase green light emission and can be manufactured at low cost without using a sapphire substrate and a fluorescent agent is provided. An Si (100) substrate is anisotropically etched so that GaN is nonpolar, thereby forming a (110) plane and a (11-2) plane having different inclination angles. A SiC + AlN buffer layer 5 and n-type GaN epitaxial layers 7 and 8 are formed on this surface. As the light emitting layer, a quantum well layer film having a little influence of polarity or having a different In concentration depending on the crystal plane is obtained, and a red light emitting quantum multiple well layer 9 (a) is formed on the (100) plane of the planar region, and (( The green quantum multiple well layer 10 (d) is formed on the (110) plane, and the blue light emission quantum multiple well layer 10 (e) is formed on the (11-2) plane in the slope region. Further, p-type GaN layers 11 and 12 are formed. As a result, an efficient white diode can be obtained by forming the quantum well layer once. [Selection] Figure 20 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220107068-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112397587-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111048641-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111048641-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112397587-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112397586-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102497403-B1 |
| priorityDate | 2012-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.