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filingDate 2012-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2014-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014072477-A
titleOfInvention Wafer support of semiconductor epitaxial manufacturing apparatus, manufacturing method thereof, semiconductor epitaxial manufacturing apparatus, and manufacturing method thereof
abstract An object of the present invention is to provide a wafer support capable of suppressing the generation of crystal defects and particles of a semiconductor epitaxial wafer to be manufactured even when used for a long time in a semiconductor epitaxial manufacturing apparatus. In a semiconductor epitaxial manufacturing apparatus, a wafer support for floating a satellite on which the semiconductor substrate is mounted with a gas, and a protective layer over the entire surface of a gas passage formed in the wafer support through which the gas for floating the satellite passes Or a wafer support of a semiconductor epitaxial manufacturing apparatus having a protective tube. [Selection] Figure 1
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Total number of triples: 41.