http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014067752-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2012-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa6d3c775b97999fb3cf0f69fdabc984 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_358eb94eb84d648f1ad23ad0ffc95ebf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a51be7116a241fb587bd009710d904e7 |
| publicationDate | 2014-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014067752-A |
| titleOfInvention | Stripping solution for photolithography and pattern forming method |
| abstract | Photoresist stripping solution capable of effectively stripping and removing photoresist pattern residue and etching residue and having excellent anticorrosive properties against SiO 2 and various metal materials, and pattern forming method using the same To provide. As a counter amine of hydrofluoric acid contained in a stripping solution for photolithography, a predetermined basic compound is used, and the pH measured at 23 ° C. of the stripping solution for photolithography is 6.0 or less or 8 Adjust to 5 or more. [Selection] Figure 1 |
| priorityDate | 2012-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 150.