http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014067479-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_df4d1d681d9c274773d9eee6368eeb33 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29K2909-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29K2909-08 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C43-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C59-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-855 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-65 |
| filingDate | 2013-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb5839d8b8527ae16abb24634b252c89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a6a16535eeb05c865747c55a43c4cf6 |
| publicationDate | 2014-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014067479-A |
| titleOfInvention | Nano-imprinting master template and its manufacturing method |
| abstract | PROBLEM TO BE SOLVED: To provide a nanoimprinting master template and a manufacturing method thereof. A method of making a nano-imprinting master template uses a metal etch stop layer in two etching steps. A layer of silicon dioxide is deposited on the etch stop layer and a first resist pattern of either concentric rings or radial spokes is formed on the silicon dioxide layer. The exposed silicon dioxide layer is etched down to the etch stop layer and the resist is removed to expose the silicon dioxide ring or spoke pattern on the etch stop layer. A second resist pattern of a ring (if the spoke is the first pattern) or a spoke (if the ring is the first pattern) is formed over the silicon dioxide ring or spoke and the etch stop layer. The exposed silicon dioxide is etched down to the etch stop layer and the resist is removed to expose the pattern of silicon dioxide pillars on the etch stop layer. [Selection] Figure 4E |
| priorityDate | 2012-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.