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publicationDate 2014-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014060379-A
titleOfInvention Terminal structure and semiconductor device
abstract Provided is a terminal structure capable of preferably achieving both improvement in mechanical strength of a bump and narrowing of the pitch of the bump. A substrate 10, an electrode 20 formed on the substrate, an insulating coating layer 30 formed on the substrate and on the electrode and having an opening exposing at least a part of the electrode, and the opening. An under bump metal layer 70 that fills and covers a part of the insulating coating layer, and a dome-shaped bump 85 that covers the under bump metal layer, and the under bump metal layer serves as a bump in a cross section along the stacking direction. A terminal structure having a convex shape toward the center, wherein the thickness T u0 of the under bump metal layer at the center of the opening is equal to or greater than the thickness T u1 of the under bump metal layer at the end of the opening. [Selection] Figure 2
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