http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014060288-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate | 2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4dc0303573415def4136b003c8172e5b |
| publicationDate | 2014-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014060288-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | The reliability of a semiconductor device is improved. A feature of the first embodiment is that, for example, a p-type cladding layer PCL includes a p-type cladding layer PCL1, a p-type cladding layer PCL2, and a p-type cladding layer PCL3. . At this time, the band gap size (Eg1) of the p-type cladding layer PCL1 is smaller than the band gap size (Eg2) of the p-type cladding layer PCL2. Further, the band gap size (Eg3) of the p-type cladding layer PCL3 is larger than the band gap size (Eg1) of the p-type cladding layer PCL1 and the band gap size of the p-type cladding layer PCL2 ( It is smaller than Eg2). [Selection] Figure 2 |
| priorityDate | 2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.