Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4925 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
filingDate |
2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68ef2fcc89f91b0291c843d055e2747e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e15293c2d73b3a076ee372308f5b35e8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e36ef89e4bd08c90de037dcb1bbc89fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9a8fd0be51e79c3c9d5070c504be311 |
publicationDate |
2014-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2014060286-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
The performance of a semiconductor device is improved. A gate electrode GE is formed on a semiconductor substrate SUB via an insulating film GI for a gate insulating film, and an insulating film IL1 extends from the sidewall of the gate electrode GE to the semiconductor substrate SUB. A semiconductor layer EP1 which is an epitaxial layer for source / drain is formed on a portion of the semiconductor substrate SUB exposed from the insulating film IL1. The insulating film IL1 has a portion extending on the side wall of the gate electrode GE and a portion extending on the semiconductor substrate SUB, and a part of the semiconductor layer EP1 is insulated from a portion extending on the semiconductor substrate SUB. Located on the membrane IL1. [Selection] Figure 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9780215-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5902868-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016013087-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9583630-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016025351-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10026842-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015193940-A1 |
priorityDate |
2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |