http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014041964-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
filingDate | 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56a6575a464e58edeb1bae8524649e8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2658de12889125765a926c549eb955ba |
publicationDate | 2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2014041964-A |
titleOfInvention | Nitride semiconductor light emitting device manufacturing method and nitride semiconductor light emitting device |
abstract | A method of manufacturing a nitride semiconductor light-emitting element that can be easily manufactured because it is not necessary to form a groove in a nitride semiconductor layer or a growth substrate, and that can manufacture a nitride semiconductor light-emitting element with a high yield. And a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light-emitting device in which a growth substrate is peeled off by forming a space, and a nitride semiconductor light-emitting device manufactured by the manufacturing method. [Selection] Figure 6 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021131675-A1 |
priorityDate | 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.