http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014041964-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
filingDate 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56a6575a464e58edeb1bae8524649e8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2658de12889125765a926c549eb955ba
publicationDate 2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014041964-A
titleOfInvention Nitride semiconductor light emitting device manufacturing method and nitride semiconductor light emitting device
abstract A method of manufacturing a nitride semiconductor light-emitting element that can be easily manufactured because it is not necessary to form a groove in a nitride semiconductor layer or a growth substrate, and that can manufacture a nitride semiconductor light-emitting element with a high yield. And a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light-emitting device in which a growth substrate is peeled off by forming a space, and a nitride semiconductor light-emitting device manufactured by the manufacturing method. [Selection] Figure 6
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021131675-A1
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Total number of triples: 28.