http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014038927-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-063 |
filingDate | 2012-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08e73c0c15d828110b586c741e0009c9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8863a888b2618eb9e881a918b46b08c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_706162ffb069888915dd8f227b7823fc |
publicationDate | 2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2014038927-A |
titleOfInvention | Optical device and manufacturing method thereof |
abstract | A broadband optical element can be configured with a material in which a rare earth is added as a host material, such as a crystal such as oxide or silicate. A first rare earth oxide layer 105a made of a first rare earth oxide, a second rare earth oxide layer 105b made of a second rare earth oxide different from the first rare earth, and an oxide of the first rare earth A rare earth-containing layer 105 having a laminated structure of the third rare earth oxide layer 105c is formed on the silicon layer 103 by a physical vapor deposition method such as a sputtering method, and is heated to 950 ° C., for example. [Selection] Figure 1C |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106057641-A |
priorityDate | 2012-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.