http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014036229-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 |
| filingDate | 2013-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17323325080eacd5af10c289d5b0614b |
| publicationDate | 2014-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014036229-A |
| titleOfInvention | Light emitting element |
| abstract | Provided are a light emitting element, a light emitting element package, and a light unit that can improve operating voltage, prevent damage in a high field, and improve electrical reliability. A light emitting device includes a first conductive semiconductor layer, an active layer disposed below the first conductive semiconductor layer, and a second conductive semiconductor layer disposed below the active layer. A light emitting structure 10 including the first electrode 80 electrically connected to the first conductive type semiconductor layer, disposed under the light emitting structure, and having an upper surface penetrating the active layer and including the first conductive type semiconductor layer. The reflective electrode 17 disposed on the current blocking layer 35, the first metal layer 40 disposed on the current blocking layer, and electrically connected to the second conductive semiconductor layer. including. [Selection] Figure 1 |
| priorityDate | 2012-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.