| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24488 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2012-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26ca075c02ca739bdac7d126b7233d45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd76898324b8733190763dde3f136ec4 |
| publicationDate |
2014-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014036153-A |
| titleOfInvention |
Epitaxial silicon wafer manufacturing method and epitaxial silicon wafer |
| abstract |
A method of manufacturing an epitaxial silicon wafer having a high degree of flatness at a peripheral edge and an epitaxial silicon wafer obtained thereby. The front surface of a silicon wafer 2 in which the surface orientation of the front surface 23 is a (100) surface or a (110) surface and the chamfering width A1 of the end portion on the front surface 23 side is 200 μm or less. An epitaxial silicon wafer manufacturing method comprising forming an epitaxial layer 3 on a surface 23. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017085094-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6256576-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019523991-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160112113-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015126010-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018082072-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019117857-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11482597-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018117402-A1 |
| priorityDate |
2012-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |