| abstract |
An object is to provide a field effect transistor having high mobility and low S value. It is another object of the present invention to provide a method for manufacturing a field effect transistor that can obtain high characteristics even at a low temperature or a short thermal history. In and Zn elements, Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids A field effect transistor having a semiconductor layer made of a complex oxide containing one or more elements X selected from the group consisting of the above in the atomic ratios of (1) to (3) below. In / (In + Zn) = 0.2 to 0.8 (1) In / (In + X) = 0.29 to 0.99 (2) Zn / (X + Zn) = 0.29 to 0.99 (3) [Selection] Figure 1 |