| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c38d38e537a924288998414661dd926a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2012-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86a231b3deca6a3c6b834808398bb78a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f25998be9416fec556389edd87bb1d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e8a9546af08de6c5856a6f5439fab95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0396c1504ec420f92baa2e0002258b89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c0581139871452421b4a418fe0562ad |
| publicationDate |
2014-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014022549-A |
| titleOfInvention |
THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR |
| abstract |
A thin film transistor in which an oxide is applied to a channel and a gate insulating layer is improved in performance and a manufacturing process of the thin film transistor is simplified. One thin film transistor of the present invention includes a gate insulating layer including silicon oxide (which may include unavoidable impurities) between a gate electrode and a channel. In addition, the channel 44 of the thin film transistor 100 contains indium (In) and zinc (Zn). When indium (In) is 1, zirconium (at which the atomic ratio is 0.046 to 0.375) is obtained. Zr) is a channel oxide (which may contain inevitable impurities). [Selection] Figure 9 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3118900-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10699632-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10403234-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016042577-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113314614-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10235930-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10008181-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018098222-A |
| priorityDate |
2012-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |