| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 |
| filingDate |
2012-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b37548ea11e33cc9a45d4db96901e4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df34c7f2b3b0132867365f3c16c91012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f9464d741682d909f68220e50e092c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f613a736f9b9589179d01767d43942c |
| publicationDate |
2014-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014022507-A |
| titleOfInvention |
Nonvolatile programmable switch |
| abstract |
Good write / erase characteristics are maintained even when miniaturized. A nonvolatile programmable switch according to an embodiment is connected to first and second nonvolatile memory transistors, a common node connected to output terminals of the first and second nonvolatile memory transistors, and a common node. And a logic transistor portion. The length in the channel length direction of the gate electrode G of the first and second nonvolatile memory transistors is shorter than the length in the channel length direction of the charge storage film CT. [Selection] Figure 2 |
| priorityDate |
2012-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |