| abstract |
An SOI substrate is manufactured by hydrogen ion implantation, in which a base substrate is a substrate having low heat resistance such as a glass substrate, surface flatness is high, and a thin semiconductor layer is 100 nm or less. A semiconductor substrate and a base substrate are attached through a bonding layer. By performing heat treatment and dividing the semiconductor substrate, a base substrate to which a semiconductor layer separated from the semiconductor substrate is fixed can be obtained. By irradiating the semiconductor layer with laser light and melting it, the surface flatness of the semiconductor layer is improved and its crystallinity is recovered. After the laser light irradiation, the semiconductor layer is thinned by etching or the like. Through the above steps, a thickness of 100 is formed on the base substrate. An SOI substrate having a single crystal semiconductor layer with a thickness of less than or equal to nm can be manufactured. [Selection] Figure 1 |