http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014017506-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2013-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbc08ddc6d66d2b1382be7470af1e3cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10941373b6a864097266d70055b7c335 |
| publicationDate | 2014-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014017506-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | A highly reliable semiconductor device capable of high-speed operation over a flexible substrate is manufactured with high yield. A first step of forming a release layer on an insulating substrate by a sputtering method, planarizing the release layer by a reverse sputtering method, and forming an insulating film on the planarized release layer; A second step of forming a damaged region by introducing hydrogen or the like and forming an insulating film on the semiconductor substrate on which the damaged region is formed, and an insulating film formed on the insulating substrate, and a semiconductor A semiconductor layer is formed on the insulating substrate by bonding the insulating film on the substrate and peeling the semiconductor substrate from the damaged region, and an SOI substrate is manufactured by planarizing the semiconductor layer, and the SOI substrate is formed on the SOI substrate. A semiconductor device is manufactured. [Selection] Figure 1 |
| priorityDate | 2007-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 63.