| abstract |
The present invention provides a nitride semiconductor nanowire applicable to many semiconductor devices such as a diode, an LED, and a transistor, and a manufacturing method thereof. A method of growing a plurality of nitride-based semiconductor nanowires using chemical vapor deposition (CVD) based on a technique for growing a selected region, wherein a nitrogen source and An organometallic source is present and a nitrogen source is flowing continuously. The plurality of nanowires 110 are epitaxially connected to the substrate 105 and are upright from the substrate 105, and each of the at least one nanowire 110 has the same crystal structure over the entire length. [Selection] Figure 1 |