http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013543982-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L1-2293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B5-0014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L1-2281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L5-162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B7-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L1-00 |
| filingDate | 2011-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013543982-A |
| titleOfInvention | New embedded 3D stress and temperature sensor using silicon doping operation |
| abstract | A new way of building a stress sensing rosette with the ability to extract six stress components and temperatures has been provided, and its feasibility has been verified through both analysis and experimentation. This scheme can include changing the doping concentration of the sensing element and utilizing the inherent behavior of the shear piezoresistive coefficient (π44) in n-Si. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7174562-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019060855-A |
| priorityDate | 2010-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.