| abstract |
A photovoltaic device and a method for forming a p-type semiconductor layer of the photovoltaic device are provided. Further provided is a process for forming a thermal interface of gallium or a gallium alloy using an electroplating process. A method for forming a p-type semiconductor layer is typically an organic compound that does not contain a complexing agent and contains a gallium salt, methanesulfonic acid or sodium sulfate, at least one nitrogen atom or at least one sulfur atom, or both. A layer of gallium or a gallium alloy is formed on the conductive layer by bringing the conductive layer into contact with a plating bath containing an additive and a solvent, and adjusting the pH of the solution to be less than 2.6 or more than 12.6. Electroplating. The photovoltaic device includes an impurity selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof in the p-type semiconductor layer. By electroplating gallium or a gallium alloy in this manner, various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed. [Selection] Figure 6 |