Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66537 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2011-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2013533624-A |
titleOfInvention |
Punch-through suppression transistor |
abstract |
An advanced transistor with a punch-through suppression configuration includes a gate having a length Lg, a well doped to have a first concentration of dopant, and a screen region located below the gate and having a second concentration of dopant. Including. The second concentration of dopant may be higher than 5 × 10 18 dopant atoms / cm 3 . At least one punch-through suppression region is disposed below the gate and between the screen region and the well. The punch-through suppression region has a third concentration of dopant between the first concentration and the second concentration. A bias voltage can be applied to the well region to adjust the threshold voltage of the transistor. |
priorityDate |
2010-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |