http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013533614-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
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filingDate 2011-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013533614-A
titleOfInvention Chemical planarization of copper wafer polishing
abstract The embodiments described herein relate to the removal of material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method includes a substrate having a conductive material layer formed thereon in a polishing solution that includes phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizing agents. Exposing, forming a passivation layer over the conductive material layer, and causing a relative motion between the substrate and the polishing pad to remove at least a portion of the passivation layer to form an underlying conductive material layer And exposing a portion of the conductive material layer exposed by chemical dissolution.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016017063-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016031971-A
priorityDate 2010-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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