http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013530539-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate | 2010-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013530539-A |
| titleOfInvention | High concentration P doped quantum dot solar cell by forced doping of INP and manufacturing method |
| abstract | The present invention relates to a method for manufacturing a semiconductor quantum dot-sensitized solar cell. In the manufacturing method of the present invention, after a semiconductor layer containing a group 4 element and InP is formed on an upper portion of a substrate, the substrate on which the semiconductor layer is formed is heat-treated to remove In (Indium). There is a feature including a quantum dot formation step of forming an n-type semiconductor quantum dot which is a group 4 element quantum dot doped with (phosphorus). [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016100576-A |
| priorityDate | 2010-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.