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filingDate 2010-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2013-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013515376-A
titleOfInvention PECVD (plasma chemical vapor deposition) multi-step process using continuous plasma
abstract Embodiments of the present invention present a method for reducing defects during multi-layer deposition. In one embodiment, the method includes exposing the substrate to a first gas mixture and an inert gas in the presence of a plasma to deposit a layer of the first material on the substrate; When the thickness is obtained, the step of terminating the first gas mixture while allowing the inert gas to flow while maintaining the plasma can coexist with the first gas mixture in the presence of the plasma. Exposing the inert gas and the second gas mixture to deposit a second material layer over the first material layer in the same processing chamber, wherein the first material layer and the second material layer The material layers are different from each other.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015070233-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019140314-A
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