| abstract |
A method for depositing and crystallizing material on a substrate is disclosed, and in certain embodiments, the method may include generating a plasma having deposited and blown species and energy transport species. During the first period, no bias voltage is applied to the substrate and seeds are deposited on the substrate through plasma deposition. During the second period, a voltage is applied to the substrate, attracting ions toward and within the deposited species, thereby crystallizing the deposited layer. This process can be repeated until sufficient thickness is obtained, and in other embodiments, the bias voltage or bias pulse duration can be changed to change the amount of crystallization that occurs. In other embodiments, the deposited layer may be doped with a dopant. |