| abstract |
Method of forming a silicon carbide sintered body has an oxygen content of less than about 3 wt%, a silicon carbide powder having a surface area in the range of about 8m 2 / g to about 15 m 2 / g, the boron carbide powder and carbon A step of mixing with a sintering aid to form a silicon carbide substrate. Alternatively, a method for producing a silicon carbide sintered body comprises mixing silicon carbide powder with titanium carbide powder having an average particle size ranging from about 5 nm to about 100 nm and a carbon sintering aid to form a silicon carbide substrate. Process. In another alternative, a method for forming a silicon carbide sintered body includes mixing silicon carbide powder with boron carbide powder, titanium carbide powder, and a carbon sintering aid to form a silicon carbide body. After sintering, the silicon carbide body has a density of at least 98% of the theoretical density of silicon carbide. |