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publicationDate 2013-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013254538-A
titleOfInvention Nonvolatile semiconductor memory device
abstract To improve relief efficiency for a local defective column. Memory cells are arranged in a matrix, and a memory cell array 103 is divided into p (p is an integer of 2 or more) areas in a column direction, and a defective column is arranged in a part of the memory cell array 103. A column redundancy area provided with a replaceable redundancy column and a column replacement register 106 holding column replacement information for replacing a defective column in the selected area with a redundancy column are provided. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015036999-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7316327-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016157495-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016511909-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021185506-A
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