http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013243261-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
filingDate 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da669bb2366dee38246b3951f753b5d5
publicationDate 2013-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013243261-A
titleOfInvention Method for manufacturing solid-state imaging device
abstract A technique advantageous in reducing interface traps in a MOS structure is provided. A method of manufacturing a solid-state imaging device includes a first step of forming a member having an insulating film on a semiconductor substrate, and heat-treating the member in an atmosphere containing deuterium after the first step. A second step and a third step including a cooling step for cooling the member in an atmosphere in which deuterium is present after the second step. In the cooling step in the third step, the member is It is characterized by cooling to a temperature not lower than room temperature and not higher than 250 ° C. [Selection] Figure 1
priorityDate 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 17.