| abstract |
A TFT is prevented from being contaminated by Cu by sandwiching a Cu wiring between silicon nitride films. A crystalline semiconductor film, a gate insulating film on the crystalline semiconductor film, a gate electrode on the gate insulating film, a first interlayer insulating film on the crystalline semiconductor film and the gate electrode, and a first interlayer A first wiring electrically connected to the crystalline semiconductor film through a first contact portion provided in the insulating film, and the first wiring on the first interlayer insulating film and the first wiring. A first silicon nitride film provided with a partially exposed second contact portion and a second interlayer insulating film on the first silicon nitride film; A barrier layer for preventing diffusion of Cu provided on the first wiring exposed by the second contact portion; a second wiring made of Cu on the barrier layer provided on the second contact portion; And a second silicon nitride film provided so as to cover the two wirings. [Selection] Figure 14 |