http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013232682-A

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filingDate 2013-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6626ebbbdbd8e139ea659af0850aaf7c
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publicationDate 2013-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013232682-A
titleOfInvention Method for producing InP-based vertical cavity surface emitting laser and device produced by this method
abstract A method of making an InP-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) specifically adapted to emit light having a center wavelength of about 1.30 μm I will provide a. Selecting a specific operating wavelength, determining a photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature, and dividing the sum of the maximum operating temperature and 110 by 1.96. At least half of the high refractive index layer 3a of DBR3 made of AlGaInAs or other material that can be epitaxially grown on the InP substrate 2 having a band gap equal to or greater than the sum of the photon energy and the photon energy (expressed in meV) Including the step of creating. The creation of such a high refractive index layer creates a sufficient difference between the refractive indices of alternating layers of DBR, and requires the use of a DBR that is either bonded to an InP substrate or metamorphically grown on an InP substrate. Is resolved. [Selection] Figure 1
priorityDate 2004-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 24.