http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013197140-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-48
filingDate 2012-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f0db112d6824752597543452218654e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ef646aa5650b954ac1e40fcb1c43266
publicationDate 2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013197140-A
titleOfInvention Semiconductor thin film and manufacturing method thereof
abstract A flat semiconductor thin film capable of preventing a crystal grain boundary from being mixed into a channel region of a TFT is provided. A semiconductor thin film includes a crystalline silicon thin film formed on an insulating substrate. The crystalline silicon thin film 2 includes a plurality of crystal grains 21. Each of the plurality of crystal grains 21 has a rectangular planar shape. And the several crystal grain 21 is arrange | positioned so that the long side direction of a strip shape may become the same. As a result, when the crystalline silicon thin film 2 is applied to the channel layer of the TFT, a channel layer having no crystal grain boundary can be formed. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021215170-A1
priorityDate 2012-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 17.