http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013197140-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69b4de7d64ebafc368b849bca94eab18 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-48 |
filingDate | 2012-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f0db112d6824752597543452218654e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ef646aa5650b954ac1e40fcb1c43266 |
publicationDate | 2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2013197140-A |
titleOfInvention | Semiconductor thin film and manufacturing method thereof |
abstract | A flat semiconductor thin film capable of preventing a crystal grain boundary from being mixed into a channel region of a TFT is provided. A semiconductor thin film includes a crystalline silicon thin film formed on an insulating substrate. The crystalline silicon thin film 2 includes a plurality of crystal grains 21. Each of the plurality of crystal grains 21 has a rectangular planar shape. And the several crystal grain 21 is arrange | positioned so that the long side direction of a strip shape may become the same. As a result, when the crystalline silicon thin film 2 is applied to the channel layer of the TFT, a channel layer having no crystal grain boundary can be formed. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021215170-A1 |
priorityDate | 2012-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 17.