http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013191770-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02104 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d542da13677d648de63861844015c4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa70862fdb19aa7b23eb104e048510a3 |
| publicationDate | 2013-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013191770-A |
| titleOfInvention | Method for stabilizing film forming apparatus and film forming apparatus |
| abstract | [PROBLEMS] To stabilize the inside of a processing vessel immediately after a boron-containing nitride film forming process and prevent boron from adversely affecting the subsequent boron-free nitride film forming process, thereby improving the reproducibility of the film forming process. A method for stabilizing a film forming apparatus is provided. A boron-containing nitride film forming process for forming a boron-containing nitride film on an object to be processed in a processing vessel 4 that can be evacuated, and a boron-free nitride film that forms a boron-free nitride film that does not contain boron. In a method for stabilizing a film forming apparatus capable of selectively performing a nitride film formation process, a boron-containing nitride film formation is performed when a boron-free nitride film formation process is performed after a boron-containing nitride film formation process. Between the treatment and the boron-free nitride film formation treatment, a heat stabilization treatment is performed in which the inside of the processing vessel is heated in an atmosphere containing an oxygen-containing gas. [Selection] Figure 4 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015045099-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015097255-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015045099-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831083-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017174918-A |
| priorityDate | 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.