| abstract |
PROBLEM TO BE SOLVED: To provide a sputtering target capable of producing a transparent film having high resistance even by DC sputtering, a transparent film having high resistance, and a manufacturing method thereof. A sputtering target includes zinc oxide as a main component, and one or more elements selected from the group of elements of In, Ga, Al, and B are 0.005 to 0.1 with respect to the total metal component amount. It consists of an oxide sintered body having a component composition contained in atomic%, and the density of the oxide sintered body is 5.3 g / cm 3 or more. The high-resistance transparent film is formed by DC sputtering using the above sputtering target, and has a volume resistivity of 1 × 10 4 Ω · cm or more. [Selection] Figure 1 |