http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013182973-A

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publicationDate 2013-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013182973-A
titleOfInvention Substrate bonding method and semiconductor device
abstract A substrate on which a plurality of semiconductor devices are formed is simply and appropriately bonded. A device region and a liquid supply region higher than the scribe line region are formed on a first wafer (steps S1 and S2), and the surfaces of the device region and the liquid supply region are activated (step S3). A device region is formed on the second wafer (step S4), a liquid supply hole and a through hole are formed (step S7), a through electrode is formed (step S8), and a position corresponding to the device region and the liquid supply region is formed. The insulating film is patterned and hydrophilized to form a bonded region (step S10), and the surface of the bonded region is activated (step S11). The first wafer and the second wafer are overlaid (step S12), and pure water is supplied from the liquid supply hole of the second wafer to the liquid supply region of the first wafer (step S13). The positions of the first wafer and the second wafer are adjusted (step S14), and the first wafer and the second wafer are bonded (step S15). [Selection] Figure 1
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