| abstract |
PROBLEM TO BE SOLVED: To reduce the influence of heat generation of a signal processing unit. A first semiconductor substrate having a photoelectric conversion unit that generates a signal charge in response to incident light, and a signal processing unit having a signal processing unit that processes an electrical signal based on the signal charge generated by the photoelectric conversion unit. 2, a signal processing unit 22 is located in an orthogonal projection region from the photoelectric conversion unit 11 to the second semiconductor substrate 20, and between the first semiconductor substrate 10 and the second semiconductor substrate 10, In the photoelectric conversion device provided with the multilayer film 30 including a plurality of insulator layers, the thickness T21 of the second semiconductor substrate 20 is less than 500 μm, and the thickness T21 of the second semiconductor substrate 20 is less than that of the second semiconductor substrate 20. It is larger than the distance T13 to the light receiving surface of the first semiconductor substrate. [Selection] Figure 1 |