http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013175747-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95585944cd76ddfb6dc33ed2a0b84403 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2013-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd443b12256e2f7182d3f073667e6898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8236b13685876e728dc7349d89e6768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e11ec0406660313feac5646537584cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6af38d38e6a7564993c51aa668a979ec |
| publicationDate | 2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013175747-A |
| titleOfInvention | Crystalline oxide semiconductor and thin film transistor using the same |
| abstract | A crystalline oxide semiconductor having a low carrier concentration, a high hole mobility, and a large energy band gap is provided. In a radial distribution function (RDF) that includes indium and one or more metal elements M and is determined by X-ray absorption spectroscopy, the maximum RDF with an interatomic distance between 0.3 nm and 0.36 nm is obtained. When the value is A and the maximum value of RDF between the atomic distances of 0.1 nm to 0.2 nm is B, the relationship of 0.1 <A / B <1 is satisfied and a bixbite type crystal structure is shown. A crystalline oxide semiconductor, which is a polycrystalline oxide. [Selection figure] None |
| priorityDate | 2013-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.