| abstract |
Provided is a Cu alloy thin film wiring forming method that has high adhesion strength to a substrate, can be formed by using an existing sputtering apparatus as it is, has low specific resistance, is excellent in hydrogen plasma resistance, and enables one-part etching. In addition, a Cu alloy thin film wiring having a low specific resistance formed by the forming method and excellent in hydrogen plasma resistance is provided. A Cu—Ca alloy film is formed by sputtering using a Cu—Ca alloy target having a composition of Ca: 0.5 at% or more and less than 5 at%, balance: Cu and inevitable impurities, and then an oxygen partial pressure is formed. However, the above-mentioned problem is solved by performing heat treatment at 300 to 700 ° C. in a trace oxygen-containing inert gas atmosphere of 10 −4 to 10 −10 atm. [Selection] Figure 2 |