| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2012-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08ea018991cae2563e6590834328f2e2 |
| publicationDate |
2013-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013162078-A |
| titleOfInvention |
Nitride semiconductor device including heterojunction and manufacturing method thereof |
| abstract |
There is provided a nitride semiconductor device having an increased withstand voltage and a reduced leakage current. A nitride semiconductor device includes an Al x Ga 1-x N layer (3) and an Al y Ga 1-y N layer (0 ≦ x <y ≦ 1) sequentially stacked on a buffer layer (2). (4) and the Al y Ga 1-y N layer (4) so as to individually cover the plurality of threading dislocations (PD) appearing on the upper surface of the Al y Ga 1-y N layer (4). It further includes a plurality of local GaN layer portions (5) formed thereon. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110600536-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015079800-A |
| priorityDate |
2012-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |