http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013161933-A

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filingDate 2012-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_042f52d51e387d9ba41f83b486d96e45
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publicationDate 2013-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013161933-A
titleOfInvention Nonvolatile memory element and manufacturing method thereof
abstract A variable resistance nonvolatile memory element capable of reducing an initial breakdown voltage and suppressing variations in the initial breakdown voltage, and a method for manufacturing the same. A method for manufacturing a nonvolatile memory element according to the present invention includes a step of forming a lower electrode 105 ″ on a substrate, and a first resistance change layer 106a composed of a transition metal oxide on the lower electrode 105 ″. Forming the insulating layer 112 ′ by covering the first variable resistance layer 106 a ′, forming the through hole 130 in the insulating layer 112 ′, and the first exposed in the through hole 130. A step of selectively oxidizing the resistance change layer 106a ′ to form an oxide film and forming a second resistance change layer 106b composed of the oxide film; and an upper electrode 107 on the second resistance change layer 106b. Forming a '. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112310040-A
priorityDate 2012-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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