http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013159627-A

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classificationIPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-02
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filingDate 2012-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20a442f4f735161a071c7a9f7ae0f902
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c394019ec9a3b1af8f2020d27870795f
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publicationDate 2013-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013159627-A
titleOfInvention Metal film deposition re-peeling tape and method for manufacturing semiconductor wafer
abstract A metal film deposition re-peeling tape that imparts high electrostatic chuck adsorption to a support plate for fixing a semiconductor wafer and can be easily replaced, and a semiconductor wafer using the metal film deposition re-peeling tape A manufacturing method is provided. A metal film deposition re-peeling tape for imparting electrostatic chuck adsorption to a support plate for reinforcing a semiconductor wafer in a manufacturing process of a semiconductor chip. The base film comprises a film, a vapor-deposited metal film layer formed on one surface of the base film, and a re-peeling adhesive layer formed on the other surface, and the base film has a thermal shrinkage rate of 10% at 200 ° C. The vapor-deposited metal film layer is made of a metal having a surface resistivity of 10,000 Ω or less when vapor-deposited to a thickness of 1 μm, and the re-peeling pressure-sensitive adhesive layer is 30 ° C. to 200 ° C. under air and normal pressure conditions. A metal film-deposited re-peeling tape comprising a pressure-sensitive adhesive having a weight reduction rate of 10% by weight or less when heated to a thickness of 0.2 to 1.5 N / 25 mm. [Selection figure] None
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6719694-B1
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